Bipolar Junction Transistor MCQ. We covered all the Bipolar Junction Transistor MCQ in this post for free so that you can practice well for the exam.
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MCQ on Bipolar Junction Transistor for NEET Students
An NPN transistor conducts when
(A) both collector and emitter are negative with respect to the base.
(B) the collector is positive and the emitter is at the same potential as the base.
(C) the collector is positive and the emitter is negative with respect to the base.
(D) both collector and emitter are positive with respect to the base.
Option c – the collector is positive and the emitter is negative with respect to the base.
When the Zener diode is used as a voltage stabilizer, it is connected i. in parallel with a load. ii. in series with a load. iii. in reverse bias. iv. in forward bias.
(A) i and iii are correct.
(B) i and iv are correct.
(C) ii and iv are correct.
(D) ii and iii are correct.
Option a – i and iii are correct.
In a junction diode, the holes are formed due to ……….
(A) protons
(B) neutrons
(C) extra electron
(D) missing of electrons
Option d – missing of electrons
In an NPN transistor, the collector current is 11 mA. If 89% of electrons emitted reach the collector, then
(A) emitter current will be 1.2 mA
(B) emitter current will be 12.3 mA
(C) base current will be 1.12 mA
(D) base current will be 11.2 mA
Option b – emitter current will be 12.3 mA
A Zener diode has a breakdown voltage of 6 V with a maximum power dissipation of 300 mW. The maximum current the diode can handle will be
(A) 50 mA
(B) 48 mA
(C) 46 mA
(D) 44 mA
Option a – 50 mA
The voltage gain of an amplifier with 8% negative feedback is 10. The voltage gain without feedback will be
(A) 66.67
(B) 100
(C) 50
(D) 75
Option c – 50
The energy band gap in silicon and germanium in eV respectively is
(A) 0.7, 1.1
(B) 1.1, 0.7
(C) 1.7, 0.7
(D) 0.7, 1.7
Option b – 1.1, 0.7
For television, which of the following LEDs are used?
(A) Blue LEDs
(B) Red LEDs
(C) Green LEDs
(D) Infrared LEDs
Option d – Infrared LEDs
In an n-type semiconductor, i. a silicon crystal is doped with arsenic impurity ii. a silicon crystal is doped with aluminum impurity iii. a germanium crystal is doped with boron impurity iv. a germanium crystal is doped with phosphorus impurity
(A) i and iii are correct.
(B) ii and iii are correct.
(C) i and iv are correct.
(D) only i is correct.
Option a – i and iii are correct.
For a transistor amplifier, the voltage gain
(A) is low at high and low frequencies and constant in the middle-frequency range.
(B) is high at high and low frequencies and constant in the middle-frequency range.
(C) is high at high frequency and low at low and middle-frequency ranges.
(D) remains constant for all frequencies.
Option a – is low at high and low frequencies and constant in the middle-frequency range.
If the ratio of the concentration of electrons to that of holes in a semiconductor is (9/7) and the ratio of currents is (9/5), then what is the ratio of their drift velocities?
(A) 7/9
(B) 7/5
(C) 9/7
(D) 5/7
Option b – 7/5
The intrinsic semiconductor behaves as an insulator at ………
(A) 0°C
(B) 0 K
(C) 300 K
(D) -100 °C
Option b – 0 K
The potential barrier of a p-n junction depends upon a. Amount of doping b. Type of semiconductor material C. Temperature
(A) a and b only.
(B) a, b, and c.
(C) b and c only.
(D) b only.
Option b – a, b, and c.
If gallium arsenide phosphide LED emits radiation of wavelength 6533 Å, then the energy band gap for GaAsP LED is
(A) 1.9 eV
(B) 2.7 eV
(C) 1.5 eV
(D) 2.3 eV
Option a – 1.9 eV
The potential of the depletion layer is due to ………..
(A) electrons
(B) ions
(C) holes
(D) forbidden band
Option b – ions
The p-n junction diode is used as ………
(A) a rectifier
(B) an amplifier
(C) an oscillator
(D) None of the above
Option a – a rectifier
A full-wave rectifier makes use of two identical junction diodes having negligible forward resistance. The r.m.s. value of voltage across R when a sinusoidal voltage supply of peak value 120 V is fed to the rectifier is
(A) 48.58 V
(B) 84.85 V
(C) 58.48 V
(D) 85.84 V
Option b – 84.85 V
Which of the following statement is incorrect?
(A) The resistance of intrinsic semiconductors decreases with an increase in temperature.
(B) Doping pure Si with trivalent impurities gives p-type semiconductors.
(C) The majority of carriers in p-type semiconductors are electrons.
(D) A p-n junction can act as a semiconductor diode.
Option c – The majority of carriers in p-type semiconductors are electrons
How many NOR gates are used to form an OR gate?
(A) 3
(B) 2
(C) 4
(D) 5
Option b – 2
When forward-biased, the Zener diode works as
(A) a transistor
(B) an ordinary p-n junction diode
(C) voltage regulator
(D) an oscillator
Option b – an ordinary p-n junction diode
A CE amplifier has a voltage gain of 60, an input impedance of 1200 ohms, and an output impedance of 300 ohms. The power gain of the amplifier will be
(A) 24 dB
(B) 42 dB
(C) 250 dB
(D) 12500 dB
Option b – 42 dB
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